AP12N10D Power Switch Transistor , Original Silicon Power Transistor
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...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MJ21194 COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA RF Power Transistors
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MJ21194 is a COMPLEMENTARY SILICON POWER TRANSISTORS . Part NO: MJ21194 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products......
Mega Source Elec.Limited
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ......
Anterwell Technology Ltd.
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MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
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...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ......
Wisdtech Technology Co.,Limited
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Heat Dissipation High Power MOSFET Silicon Power Transistors
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...Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. This allows it to quickly and efficiently switch power on and off, which is critical in many high-performance applications. Whether you are working with a high-frequency switching power supply or another high-power application, the High Power......
Guangdong Lingxun Microelectronics Co., Ltd
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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors
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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (......
ChongMing Group (HK) Int'l Co., Ltd
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MJE3055T TO-220 Complementary Silicon Plastic Power Transistors
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...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor......
Shenzhen Sai Collie Technology Co., Ltd.
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power......
Shenzhen Retechip Electronics Co., Ltd
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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