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Surface Mounted Field Effect Transistor

1-10 Results for

surface mounted field effect transistor

from 488 Products

IRFS3207Z Power Field Effect Transistor Mosfet Chip 75V 170A For Circuit Protection

China IRFS3207Z Power Field Effect Transistor Mosfet Chip 75V 170A For Circuit Protection on sale
...Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-3 Transistor......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V

China Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V on sale
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

NX7002AK NEXPERIA Field Effect Transistor FET SOT23 TO-236AB Surface Mounted D

China NX7002AK NEXPERIA Field Effect Transistor FET SOT23 TO-236AB Surface Mounted D on sale
NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ......
Sunbeam Electronics (Hong Kong) Limited

Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China

2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

China 2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR on sale
... Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

PTF10122 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor ERICSSON RF Power Transistors

China PTF10122 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor ERICSSON RF Power Transistors on sale
...Field Effect Transistor ERICSSON. Part NO: PTF10122 Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted...
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Queen Size Garant Field Effect Transistor Cigarette Machine Parts

China Queen Size Garant Field Effect Transistor Cigarette Machine Parts on sale
...Field Effect Transistor Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Features • Advanced Process Technology • Surface Mount......
HK UPPERBOND INDUSTRIAL LIMITED

Address: RM 18S, 27/F, HO KING COMM CTR, 2-16 FAYUEN ST, MONGKOK KOWLOON, HONG KONG

NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

China NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor on sale
...Field Effect Transistor Features ♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V ♦High density cell design for extremely low RDS(ON) ♦High power and current handling capability in a widely used surface mount package. General Description Power SOT P-Channel enhancement mode power field effect transistors......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor on sale
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD

Electronic Components Power Field-Effect Transistors UPA2738GR-E2-AT Integrated Circuits

China Electronic Components Power Field-Effect Transistors UPA2738GR-E2-AT Integrated Circuits on sale
.... - RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A). 4.5 V Gate-drive available. Small and surface mount package (Power SOP8). Pb-free and Halogen free. Electrical Characteristics : Absolute Maximum Ratings : for product datasheet, CONTACT US ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

TK13A60D TOSHIBA Field Effect Transistor

China TK13A60D TOSHIBA Field Effect Transistor on sale
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate ......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

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