epitaxial hemt gallium nitride wafer

Brand Name:zmkj

Model Number:GaN-ON-Dimond

Place of Origin:CHINA

customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area According to statistics, the temperature of the working junction will drop Low 10 ° C can double the device life. The thermal conductivity of diamond is 3 to 3 higher tha...

Brand Name:zmkj

Model Number:2-4inch GaN Template

Place of Origin:CHINA

...width (light emitting and absorption) cover the ultraviolet, visible light and infrared. Product Aluminum nitride (AlN) film Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also

Brand Name:PAM-XIAMEN

Place of Origin:China

...Epitaxial Materials On Sapphire For Gallium Nitride Devices PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial...

Brand Name:INNOTION

Model Number:YP601238T

Place of Origin:Jiangsu, China

... 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed ...

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ...

Brand Name:Crystro

Model Number:CR210127-06

Place of Origin:China

...Wafer Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims.substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim. Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy...

Brand Name:HMT

Model Number:6 inch

Place of Origin:CHINA

...wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices. By growing gan epitaxy...

Brand Name:SIGNI

Model Number:SS

Place of Origin:CN

..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial...