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All medium power transistor wholesalers & medium power transistor manufacturers come from members. We doesn't provide medium power transistor products or service, please contact them directly and verify their companies info carefully.
Total 24152 products from medium power transistor Manufactures & Suppliers |
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Brand Name:Anterwell Model Number:BCX56 Place of Origin:original factory SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:CJ Model Number:BCX56-10 Place of Origin:CN BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Model Number:BCX56 Place of Origin:original factory SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Hua Xuan Yang Model Number:AOD418 Place of Origin:ShenZhen China AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Model Number:PBSS4160T,215 Place of Origin:CN ...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Analog Devices Inc. Model Number:HMC442LC3BTR Place of Origin:Multi-origin ... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:NE5520379A-T1 NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ... |
Mega Source Elec.Limited
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Brand Name:ST Model Number:TIP42C Place of Origin:Original Factory ... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:4306W-A Place of Origin:ShenZhen China ...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:onsemi Model Number:SGL160N60UFD Place of Origin:Original Factory IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Original brand Model Number:IGT60R070D1ATMA1 Place of Origin:Original ... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:original Model Number:SIHB22N60E-E3 Place of Origin:Original Manufacturer ... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:MITSUBISHI Model Number:QM50HA-H Place of Origin:JAPAN QM50HA-H MITSUBISHI TRANSISTOR MODULE MEDIUM POWER INSULATED 『 You want to know 』 ◆ Manufacturer: Mitsubishi Electric ◆ Veswin Part Number: V107225-QM50HA-H ◆ Lead Free Status / RoHS Status: Lead free / RoHS Compliant ◆ Condition: New & Original - Factory ... |
MOORE AUTOMATION LIMITED
Fujian |
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Place of Origin:China Brand Name:CQ Model Number:ZY1000 Medium power 1000w 60v integrated Golf-car Passengers Differential Motor Gear Medium Power Differential Motor (separate type) Medium Power Differential Motor (integrated type) Motor Type Brushless DC Differential Motor Rated Power(W) 1000 Rated Voltage(VDC) 48/60 Rated Speed(RPM) 320 Non-load Speed(RPM) 350 Rated Current(A) ≤27/22.3 Non-load Current(A) ≤4/3 Rated Torque(N.m) 29.8 Efficiency ≥83% Gear Ratio 12:1 Application Small and medium |
Zhejiang Chaoqiang Machinery Co.,Ltd
Zhejiang |
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Brand Name:Original Factory Model Number:FS300R17OE4B81BPSA1 Place of Origin:CN FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Model Number:FQPF18N60C ...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... |
Yougou Electronics (Shenzhen) Co., Ltd.
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Categories:RF Transistors Country/Region:china ... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:INNOTION Model Number:YP01401650T Place of Origin:Jiangsu, China ...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
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Brand Name:NOVA acoustics Model Number:MA-4400 Place of Origin:Guangzhou, China ...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power |
Guangzhou Nova Acoustics Co., Ltd.
Guangdong |
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Brand Name:Diode Triode Transistor Model Number:TIP137 Place of Origin:USA ...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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