sensitive gate through hole transistor

Place of Origin:US

Brand Name:Original

Model Number:BT169D

Product Detail Packaging Tape & Reel (TR) Part Status Active Voltage - Off State 400V Voltage - Gate Trigger (Vgt) (Max) 800mV Current - Gate Trigger (Igt) (Max) 50µA Voltage - On State (Vtm) (Max) 1.7V Current - On State (It (AV)) (Max) 500mA Current - O...

Model Number:S6025L

Place of Origin:original factory

SCRs (1 A to 70 A) General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200...

Model Number:MBRF1045CT

Place of Origin:United States

Brand Name:Original

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Brand Name:Anterwell

Model Number:Q6012LH5

Place of Origin:original factory

Alternistor Triacs (6 A to 40 A) General Description Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically ...

Brand Name:ON

Model Number:MCR100-8

Place of Origin:USA

MCR100-8 Sensitive Gate Silicon Controlled Rectifiers 1A 600V Features ■ Sensitive gate trigger current: IGT=200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM/IPRM=100uA@TC=125℃ ■ Low holding current...

Brand Name:ST Microelectronics

Model Number:T405-600H

Place of Origin:CHINA

... for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. Triac Type Logic - Sensitive Gate Voltage - Off State 600V Current - On State (It (RMS))

Brand Name:Original Factory

Model Number:IPP60R040S7XKSA1

Place of Origin:CN

...Hole Transistors IPP60R040S7XKSA1 Integrated Circuit Chip Product Description Of IPP60R040S7XKSA1 IPP60R040S7XKSA1 enables the best price performance for low frequency switching applications. Specification Of IPP60R040S7XKSA1 Part Number IPP60R040S7XKSA1 Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate...

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a

Brand Name:original

Model Number:2N4416

Place of Origin:original

...Package options. DESCRIPTION The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The

Brand Name:MMR

Place of Origin:China

Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ...

Brand Name:ON

Model Number:FGH40N60SFD

Place of Origin:Original

... Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247 Mounting Style: Through Hole Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage:

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate...

Place of Origin:Original

SLA5064 Specifications Part Status Active FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id...

Brand Name:STMicroelectronics

Model Number:IRF630

Powerful MOSFET for High-Efficiency Electronics IRF630 Description: Get Great Performance from Your Circuit The IRF630 MOSFET is a powerful device that delivers high efficiency and superior performance for all your electronics needs. Designed to handle ...

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

...TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate...

Brand Name:Original brand

Model Number:BSZ037N06LS5ATMA1

Place of Origin:Original

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249...

Brand Name:Original

Model Number:SQP90P06-07L-GE3

Place of Origin:Original

...Transistor Chips IC PRODUCT DESCRIPTION MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified PRODUCT PROPERTIES Manufacturer: Vishay Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.6 mOhms Vgs - Gate

Brand Name:WONSUN

Model Number:DZ-138

Place of Origin:China

Traffic Access Control Barriers and Gates Solar Power Arm Barriers Arm LED If you have any question, please contact us freely! Sales representatives: Keira Whatsapp: +86 18507481610 Skype: zimin1314 Email: keira@wonsunbarrier.com Wechat: Keira_Xia The ...

Brand Name:INFINEON

Model Number:IRF100B201

...Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 192 A Rds On - Drain-Source Resistance: 4.2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - ...