toshiba n channel mosfet 900v

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

...��道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:

Brand Name:TOSHIBA

Model Number:TK5A90E,S4X

Place of Origin:Original

..., combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A.

Brand Name:IOR

Model Number:IRFPF50PBF

Place of Origin:CHINA

...Channel MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs...

Brand Name:Microchip

Model Number:Onsemi

Product Name: FQA11N90F109 Quick Detail: The FQA11N90F109 is a 900V N-channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance...

Brand Name:Fairchild/ON

Model Number:FQA11N90C

Place of Origin:CHINA

Product Attribute Attribute Value Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-3PN-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown ...

Brand Name:IXYS

Model Number:IXFN56N90P

Place of Origin:China

IXFN56N90P 900V 56A N-Channel MOSFET Ultra-Low Rds(on) 135mΩ HiPerFET™ Polar Technology Fast Body Diode Low Qg High-Speed Switching ...

Brand Name:Toshiba

Model Number:TK100E10N1,S1X(S

Place of Origin:JAPAN

Product Description: Toshiba TK100E10N1,S1X(S Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and ...

Brand Name:onsemi

Model Number:NTMT090N65S3HF

Place of Origin:Multi-origin

...MOSFET Power Electronics Product Features: • 900V N-Channel MOSFET • 30A RDS(on) • Low Gate Charge • Low Miller Capacitance • High Speed Switching • Low Qg and Qgd • 100% UIS Tested • RoHS Compliant Specifications: • Configuration: N-Channel • Drain-Source Voltage (VDS): 900V...

Brand Name:Infineon

Model Number:IPD90R1K2C3

Place of Origin:CHINA

...MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology CoolMOS Channel Mode Enhancement Channel...

Brand Name:INFINEON

Model Number:IRF1404PBF IRF1404ZPBF

...FMV06N90E FMH06N90E Discrete Semiconductors 900V 6A IRF1404 IRF1404PBF IRF1404Z IRF1404ZPBF 40V Single N-Channel Power MOSFET in a TO-220 package About IRF1404PBF: Summary of Features IRF1404 40V Single N-Channel Power MOSFET in a TO-220 package Planar ...

Model Number:IXFN39N90

Brand Name:Original

Place of Origin:US

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (...

Brand Name:Original Factory

Model Number:NVH4L060N090SC1

Place of Origin:CN

Integrated Circuit Chip NVH4L060N090SC1 Silicon Carbide MOSFETs Transistors TO-247-4​ Product Description Of NVH4L060N090SC1 NVH4L060N090SC1 is 60mohm, 900V Silicon Carbide (SiC) N-Channel MOSFET Transistors, package is TO-247-4L. Specification Of ...

Brand Name:Toshiba

Model Number:2SC5589

Place of Origin:Original Factory

...Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power MOSFET...

Brand Name:CANYI

Model Number:3N80

Place of Origin:Guangdong, China

800V n channel transistor 3N80 mosfet ITO220 field effect transistor 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer...

Model Number:P3NK90ZFP

Place of Origin:original factory

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET • TYPICAL RDS(on) = 4.1 Ω • EXTREMELY HIGH dv/dt CAPABILITY • 100% AVALANCHE TESTED • GATE CHARGE MINIMIZED • VERY ...

Brand Name:Toshiba Semiconductor

Model Number:SSM3K36MFV

Place of Origin:CHINA

... (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive ...

Brand Name:Toshiba

Model Number:2SK2009TE85LF

Place of Origin:Japan

Manufacturer: Toshiba Product category: MOSFET Technology: si Installation style: SMD/SMT Package/box: SOT-346-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds- Drain-source breakdown voltage: 30 V. Id- continuous drain current: 200ma Rds...

Brand Name:TOSHIBA

Model Number:2SK3478

Place of Origin:Original

2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 S (typ.) ►Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) ►...

Brand Name:Toshiba

Model Number:MG25Q6ES51

Place of Origin:Japan

Toshiba IGBT Power Module MG25Q6ES51 MG25Q6ES51 Product Description Brand: Toshiba Model: MG25Q6ES51 Category: Insulated Gate (MOSFET) Channel Type: N channel Conduction: enhanced Uses: A / wide band amplification Package outline: CER-DIP / ceramic line ...