Sign In | Join Free | My uabig.com
uabig.com
Products
Search by Category
Home > Adhesives & Sealants >

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

Categories Silicon Power Transistor
Place of Origin: ShenZhen China
Brand Name: OTOMO
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: 2N5401
VCBO: -160V
VCEO: -150V
VEBO: -5V
Usage: Electronic Components
Tj: 150Š
Case: Tape/Tray/Reel
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)


FEATURE

Ÿ Switching and Amplification in High Voltage

Ÿ Applications such as Telephony

Ÿ Low Current

Ÿ High Voltage



ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
2N5401TO-92Bulk1000pcs/Bag
2N5401-TATO-92Tape2000pcs/Box

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


SymbolParameterValueUnit
VCBOCollector-Base Voltage-160V
VCEOCollector-Emitter Voltage-150V
VEBOEmitter-Base Voltage-5V
ICCollector Current-0.6A
PCCollector Power Dissipation625mW
R0 JAThermal Resistance From Junction To Ambient200Š / W
TjJunction Temperature150Š
TstgStorage Temperature-55~+150Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= -0.1mA,IE=0-160V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-150V
Emitter-base breakdown voltageV(BR)EBOIE=-0.01mA,IC=0-5V
Collector cut-off currentICBOVCB=-120V,IE=0-50nA
Emitter cut-off currentIEBOVEB=-3V,IC=0-50nA

DC current gain

hFE(1)VCE=-5V, IC=-1mA80
hFE(2)VCE=-5V, IC=-10mA100300
hFE(3)VCE=-5V, IC=-50mA50
Collector-emitter saturation voltageVCE(sat)IC=-50mA,IB=-5mA-0.5V
Base-emitter saturation voltageVBE(sat)IC=-50mA,IB=-5mA-1V
Transition frequencyfTVCE=-5V,IC=-10mA, f =30MHz100300MHz


CLASSIFICATION OF hFE(2)

RANKABC
RANGE100-150150-200200-300

Typical Characteristics





Package Outline Dimensions

SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.4300.135
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
01.6000.063
h0.0000.3800.0000.015




TO-92 7DSH DQG 5HHO









Quality SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components for sale
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0