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Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

Categories Fast Recovery Rectifier Diode
Brand Name: Huixin
Model Number: UF4005 DO-41
Certification: ISO14001 ISO9001 ISO/TS16949 UL
Place of Origin: China
MOQ: 5000 PCS
Price: Negotiable
Payment Terms: T/T, Paypal, Cash
Supply Ability: 1 billion pieces/ Month
Delivery Time: 2-4Weeks
Packaging Details: 5000pcs/reel/box
Type: Epitaxial diode
Package: DO-41
MPQ: 5000PCS
Sample Time: 5-7 Days
Lead Free Status: RoHS
Max. Forward Current: 1.0Amp
Max. Reverse Voltage: 600V
Material: Silicon
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Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip

1.0 A 600V Diode DO-41 Package Fast Rectifier Diode


UF4001~UF4007 DO-41 Datasheet.pdf


Features:


  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed

Mechanical Data:

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.


ParameterSYMBOLSUF4001UF4002

UF4003


UF4004UF4005UF4006UF4007UNITS
Maximum Repetitive Peak Reverse VoltageVRRM50100

200


4006008001000Volts
Maximum RMS VoltageVRMS3570

140


280420560700Volts
Maximum DC Blocking VoltageVDC50100

200


4006008001000Volts
Maximum Average Forward Rectifier Current at TL=100°CIF(AV)

1.0


Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated loadIFSM30Amps
Maximum Instantaneous Forward Voltage at 1AVF11.41.7Volts
Maximum DC Reverse Current at rated DC blocking voltageTA=25°CIR

10


μA
TA=125°C

500


Maximum Reverse Recovery TimeTrr

50


75ns


Note: 1. Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.


Quality Epitaxial Fast Recovery Rectifier Diode 600V 1A DO-41 Package Open Junction Chip for sale
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