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2N60 2A, 600VN-CHANNEL POWER MOSFET

Categories	Mosfet Power Transistor
Brand Name:	Hua Xuan Yang
Model Number:	2N60
Certification:	RoHS、SGS
Place of Origin:	ShenZhen China
MOQ:	1000-2000 PCS
Price:	Negotiated
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day
Delivery Time:	1 - 2 Weeks
Packaging Details:	Boxed
Product name:	Mosfet Power Transistor
APPLICATION:	Power Management
FEATURE:	Excellent RDS(on)
Power mosfet transistor:	Enhancement Mode Power MOSFET
VDS:	-100v

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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2N60 2A, 600VN-CHANNEL POWER MOSFET

2N60-TC3 Power MOSFET

2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

Name: 2N60 2A 600VNCHANNEL POWER MOSFET
Brand: Hua Xuan Yang
Price: 1 USD

The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A

High Switching Speed

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free	Package	1	2	3	Packing
2N60L-TF1-T	2N60G-TF1-T	TO-220F1	G	D	S	Tube
2N60L-TF3-T	2N60G-TF3-T	TO-220F	G	D	S	Tube
2N60L-TM3-T	2N60G-TM3-T	TO-251	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

QW-R205-461.A

n ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	± 30	V
Drain Current	Continuous	I_D	2	A
Drain Current	Pulsed (Note 2)	IDM	4	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	84	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	V/ns
Power Dissipation	TO-220F/TO-220F1	P_D	23	W
Power Dissipation	TO-251	P_D	44	W
Junction Temperature		T_J	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

n THERMAL DATA

PARAMETER		SYMBOL	RATINGS	UNIT
Junction to Ambient	TO-220F/TO-220F1	θJA	62.5	°C/W
Junction to Ambient	TO-251	θJA	100	°C/W
Junction to Case	TO-220F/TO-220F1	θJC	5.5	°C/W
Junction to Case	TO-251	θJC	2.87	°C/W

n ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS=0V, I_D= 250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS=600V, V_GS=0V			1	µA
Gate-Source Leakage Current	Forward	IGSS	V_GS=30V, V_DS=0V			100	nA
Gate-Source Leakage Current	Reverse	IGSS	V_GS=-30V, V_DS=0V			-100	nA
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS=V_GS, I_D=250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS=10V, I_D=1.0A			7.0	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_GS=0V, V_DS=25V, f=1.0 MHz		190		pF
Output Capacitance		COSS			28		pF
Reverse Transfer Capacitance		CRSS			2		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		Q_G	V_DS=200V, V_GS=10V, I_D=2.0A I_G=1mA (Note 1, 2)		7		nC
Gateource Charge		QGS			2.9		nC
Gate-Drain Charge		QGD			1.9		nC
Turn-on Delay Time (Note 1)		tD(ON)	V_DS=300V, V_GS=10V, I_D=2.0A, R_G=25Ω (Note 1, 2)		4		ns
Rise Time		t_R			16		ns
Turn-off Delay Time		tD(OFF)			16		ns
Fall-Time		t_F			19		ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current		I_S				2	A
Maximum Body-Diode Pulsed Current		ISM				8	A
Drain-Source Diode Forward Voltage (Note 1)		VSD	V_GS=0V, I_S=2.0A			1.4	V
Reverse Recovery Time (Note 1)		trr	V_GS=0V, I_S=2.0A, dI_F/dt=100A/µs (Note1)		232		ns
Reverse Recovery Charge		Qrr	V_GS=0V, I_S=2.0A, dI_F/dt=100A/µs (Note1)		1.1		µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Essentially independent of operating temperature.

Product Tags:

n channel mosfet transistor

high voltage transistor

2N60 2A, 600VN-CHANNEL POWER MOSFET

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