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| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | 3DD13003B |
| Collector-Base Voltage: | 700V |
| Collector-Emitter Voltage: | 400V |
| Emitter-Base Voltage: | 9V |
| Product name: | semiconductor triode type |
| Tj: | 150℃ |
| Type: | Triode Transistor |
TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)
Ÿ power switching applications
MARKING
13003B=Device code
Solid dot=Green molding compound device, if none,the normal device
XXX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| 3DD13003B | TO-92 | Bulk | 1000pcs/Bag |
| 3DD13003B-TA | TO-92 | Tape | 2000pcs/Box |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| V CBO | Collector-Base Voltage | 700 | V |
| V CEO | Collector-Emitter Voltage | 400 | V |
| V EBO | Emitter-Base Voltage | 9 | V |
| IC | Collector Current -Continuous | 1.5 | A |
| PC | Collector Power Dissipation | 0.9 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55 ~150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 1mA, IE=0 | 700 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA, IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 1mA, IC=0 | 9 | V | ||
| Collector cut-off current | ICBO | VCB= 700V, IE=0 | 100 | µA | ||
| Collector cut-off current | ICEO | VCE= 400V, IB=0 | 50 | µA | ||
| Emitter cut-off current | IEBO | VEB= 7V, IC=0 | 10 | µA | ||
| DC current gain | hFE | VCE= 10V, IC= 0.4 A | 20 | 40 | ||
Collector-emitter saturation voltage | VCE(sat)1 | IC=1.5A,IB= 0.5A | 3 | V | ||
| VCE(sat)2 | IC=0.5A, IB= 0.1A | 0.8 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=0.5A, IB=0.1A | 1 | V | ||
| Transition Frequency | fT | VCE=10V,IC=100mA, f =1MHz | 4 | MHz | ||
| Fall time | tf | IC=1A | 0.7 | µs | ||
| Storage time | ts | IB1=-IB2=0.2A | 4 | µs |
| Rank | ||||
| Range | 20-25 | 25-30 | 30-35 | 35-40 |
Typical Characteristics
TO-92 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| Φ | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
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