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Categories | MOSFET Power Electronics |
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Brand Name: | onsemi |
Model Number: | NTZS3151PT1G |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 150mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.6 nC @ 4.5 V |
NTZS3151PT1G SOT-563 MOSFET Power Electronics Transistor for High-efficiency and High-reliability Applications
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 16 V | |
FET Feature | - | |
Power Dissipation (Max) | 170mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-563 | |
Package / Case |
Product Listing:
ON Semiconductor NTZS3151PT1G MOSFET Power Electronics
Package: SOT-563
Features:
-High voltage breakdown rating of 200V
-Low gate charge
-Low on-state resistance
-Low input capacitance
-Low reverse transfer capacitance
-Low noise figure
-Fast switching speeds
-Optimized for low power applications
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