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BSH201,215 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

Categories Electronic IC Chips
Model Number: BSH201
Place of Origin: CHINA
MOQ: 3000 PCS
Price: Negotiation
Payment Terms: T/T, Western Union , ESCROW
Supply Ability: 30000PCS
Delivery Time: STOCK
Packaging Details: 3000PCS/REEL
Description: P-Channel 60 V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB
Categories: Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 48V
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BSH201,215 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount


BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount


P-channel enhancement mode BSH201 MOS transistor


FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
The BSH201 is supplied in the SOT23 subminiature surface mounting package.


Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
 Transistors - FETs, MOSFETs - Single
ManufacturerNexperia USA Inc.
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 48V
FET Feature-
Power Dissipation (Max)417mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB



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