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| Categories | Flash Memory IC Chip |
|---|---|
| Brand Name: | Ti |
| Model Number: | CSD87312Q3E |
| MOQ: | Contact us |
| Price: | Contact us |
| Payment Terms: | Paypal, Western Union, TT |
| Supply Ability: | 50000 Pieces per Day |
| Delivery Time: | The goods will be shipped within 3 days once received fund |
| Packaging Details: | QFN |
| Description: | MOSFET 2N-CH 30V 27A 8VSON |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 125 C |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
FEATURES
APPLICATIONS
PRODUCT SUMMARY
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain to Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5V) | 6.3 | nC | |
Qgd | Gate Charge Gate to Drain | 0.7 | nC | |
RDD(on) | Drain to Drain On Resistance (Q1+Q2) | VGS = 4.5V | 31 | mΩ |
VGS = 8V | 27 | mΩ | ||
VGS(th) | Threshold Voltage | 1.0 | V | |
ORDERING INFORMATION
Device | Package | Media | Qty | Ship |
CSD87312Q3E | SON 3.3 x 3.3mm Plastic Package | 13-In ch Reel | 2500 | Tape and Reel |
ABSOLUTE MAXIMUM RATINGS
TA = 25°C | VALUE | UNIT | |
VDS | Drain to Source Voltage | 30 | V |
VGS | Gate to Source Voltage | +10/-8 | V |
ID | (1) Continuous Drain Current, TC = 25°C | 27 | A |
IDM | Pulsed Drain Current (2) | 45 | A |
PD | Power Dissipation | 2.5 | W |
TJ, TSTG | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω | 29 | mJ |
DESCRIPTION
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
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