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power transistor datasheet

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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

China MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS on sale
...POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Specifications: Datasheets......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions

China AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions on sale
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package

China Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package on sale
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

30P06D TO-252 High Power Transistor , Custom Field Effect Transistor

China 30P06D TO-252 High Power Transistor , Custom Field Effect Transistor on sale
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

China UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W on sale
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

China Low Gate Charge Mosfet Power Transistor For Inverter Systems Management on sale
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD

IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor on sale
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T

China NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T on sale
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

China Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS on sale
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate

China MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate on sale
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor......
Yougou Electronics (Shenzhen) Co., Ltd.

Address: Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A

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